S9013 transistor (npn) feature power dissipation p cm: 0.625 w (tamb=25 ) collector current i cm: 0.5 a collector-base voltage v (br)cbo : 40 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= 100a, i e =0 40 v collector-emitter breakdown voltage v(br) ceo i c = 1ma , i b =0 25 v emitter-base breakdown voltage v(br) ebo i e = 100a, i c =0 5 v collector cut-off current i cbo v cb = 40v, i e =0 0.1 a collector cut-off current i ceo v ce =20v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce =1v, i c =50ma 64 400 dc current gain h fe(2) v ce =1v, i c = 500ma 40 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50ma 0.6 v base-emitter voltage v be(sat) i c = 500 ma, i b = 50ma 1.2 v transition frequency f t v ce =6v, i c =20ma, f=30mhz 150 mhz classification of h fe(1) rank d e f g h i j range 64-91 78-112 96-135 112-166 144-202 190-300 300-400 1 2 3 to-92 1. emitter 2. base 3. collector S9013 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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